050-7616 rev b 7-2009 apt30gn60b_s(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 2ma) gate threshold voltage (v ce = v ge , i c = 430a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt30gn60b_s(g) 600 30 6337 90 90a @ 600v 203 -55 to 175 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef? cient. low gate charge simpli? es gate drive design and minimizes losses. ? 600v field stop ? trench gate: low v ce(on) ? easy paralleling ? 6s short circuit capability ? 175c rated applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 600 5.0 5.8 6.5 1.1 1.5 1.9 1.7 25 tbd 300 n/a g c e t o - 2 4 7 g c e d 3 pak g c e (s) (b) apt30gn60b apt30gn60s apt30gn60b(g) apt30gn60s(g) 600v *g denotes rohs compliant, pb free terminal finish. microsemi website - http://www.microsemi.com downloaded from: http:///
050-7616 rev b 7-2009 apt30gn60b_s(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and diode leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r gint nor gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci? cations and information contained herein. thermal and mechanical characteristics unit c/w gm min typ max .74 n/a 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa scsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 30a t j = 150c, r g = 4.3 7 , v ge = 15v, l = 100h,v ce = 600v v cc = 360v, v ge = 15v, t j = 150c, r g = 4.3 7 inductive switching (25c) v cc = 400v v ge = 15v i c = 30a r g = 4.3 7 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 30a r g = 4.3 7 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area short circuit safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (with diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (wtih diode) 5 5 turn-off switching energy 6 6 min typ max 1750 70 50 9.0 165 10 90 90 6 12 14 155 55 525 565 700 12 14 180 75 555 950 895 unit pf v nc a s ns j ns j downloaded from: http:///
050-7616 rev b 7-2009 apt30gn60b_s(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 9080 70 60 50 40 30 20 10 0 9080 70 60 50 40 30 20 10 0 3.02.5 2.0 1.5 1.0 0.5 0 1.301.20 1.10 1.00 0 0 1 2 3 4 5 0 2 4 6 8 10 12 0 3 6 9 12 15 0 20 40 60 80 100 120 140 160 180 200 8 9 10 11 12 13 14 15 16 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 100 8060 40 20 0 1614 12 10 86 4 2 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 9080 70 60 50 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 15v 12v 11v 10v 13v 9v 8v t j = 25c. 250s pulse test <0.5 % duty cycle i c = 60a i c = 30a i c = 15a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 60a i c = 30a i c = 15a t j = 175c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ge = 15v t j = 125c 7v t j = 175c v ce = 480v v ce = 300v v ce = 120v i c = 30a t j = 25c downloaded from: http:///
050-7616 rev b 7-2009 apt30gn60b_s(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.3 l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 400v t j = 25c , or =125c r g = 4.3 l = 100h 1614 12 10 86 4 2 0 6050 40 30 20 10 0 30002500 2000 1500 1000 500 0 60005000 4000 3000 2000 1000 0 250200 150 100 50 0 100 8060 40 20 0 16001400 1200 1000 800600 400 200 0 30002500 2000 1500 1000 500 0 v ge = 15v v ce = 400v v ge = +15v r g = 4.3 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v r g = 4.3 , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c e on2, 60a e off, 60a v ce = 400v v ge = +15v t j = 125c e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 60a e off, 60a e on2, 30a e off, 30a e on2, 15a e off, 15a downloaded from: http:///
050-7616 rev b 7-2009 apt30gn60b_s(g) typical performance curves 0.800.70 0.60 0.50 0.40 0.30 0.20 0.10 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,0001,000 500100 5010 100 9080 70 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 5 10 15 20 25 30 35 40 45 50 55 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 4.3 130 5010 51 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: c res c oes c ies downloaded from: http:///
050-7616 rev b 7-2009 apt30gn60b_s(g) figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circuit v cc apt40dq60 to - 247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline e1 sac: tin, silver, copper e3 sac: tin, silver, copper downloaded from: http:///
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